4188云顶集团

Manufacturing

4188云顶集团·(中国区)有限公司官网 1μm600V HVIC

 

4188云顶集团·(中国区)有限公司官网 Overview
        CSMC offers 1μm 600V HVIC(floating-gate)process with cost effective mask layer and competitive device performance(600V NLDMOS+600Visland, 200V N/PMOS+200V island), Suited for motor driver, IPM and LLC power supply applications.

 

4188云顶集团·(中国区)有限公司官网 Key Features
- Cost effective mask layer,competitive Rdson and BVdss performance
- Foundry compatible 5V CMOS,20V MV-LDMOS, 200V/600V HVMOS+island
- Rich options included parasitic Zener/JFET
- PDK and industry standard CAD tools are supported
- Supporting Thick metal layer

 

4188云顶集团·(中国区)有限公司官网 Application
-Motor driver
-IPM
-LLC
-Unmanned aerial vehicle
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4188云顶集团·(中国区)有限公司官网 1.0μm 60V/120V HVIC

 

4188云顶集团·(中国区)有限公司官网 Overview
         CSMC offers 1μm 60V/120V HVIC process with cost effective mask layer and competitive device performance, suited for power tools, Ninebot and unmanned aerial vehicle applications.

 

4188云顶集团·(中国区)有限公司官网 Key Features
- Cost effective mask layer,competitive Rdson and BVdss performance
- Foundry compatible 5V CMOS,12V MV-LDMOS, 60V/120V HV-LDMOS and island.
- Rich options included parasitic Zener/JFET
- PDK and industry standard CAD tools are supported
- Supporting Thick metal layer

 

4188云顶集团·(中国区)有限公司官网 Application
- Power tools
- Ninebot
-Unmanned aerial vehicle
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4188云顶集团·(中国区)有限公司官网 1.0μm 25V 40V HV

 

4188云顶集团·(中国区)有限公司官网 Overview 
        1.0μm 25V 40V HV is one of CSMC's high voltage process platforms. It is a simple high voltage process with a few masking layers. In addition to dual gate oxide, double metal and 1.0 micron drawn gate length process for digital applications, process modules are available for normal and isolated 5V low volt, 25V or 40V high volt drain-source CMOS transistors, and high resistance poly resistors, zener diode.
For getting a small digital circuit size, CSMC can provide 0.5μm backend design rule.

 

4188云顶集团·(中国区)有限公司官网 Key Features 
- 5V logic layout & performance compatible with the industry standard
- 1.0 micron front-end, 1.0 micron or 0.5 micron back-end design rule
- Epi process for isolated devices
- Modular concept (HR/ Zener / BJT / Special require)
- Vgs/Vds=5V/25 or Vgs/Vds=5V/40V,Vgs/Vds=25V/25 or Vgs/Vds=40V/40V HVCMOS
- High value poly resistor
- I/O cell library with 2KV HBM ESD protection levels

 

4188云顶集团·(中国区)有限公司官网 Application 
- LCD driver/LED driver
- Power management product
- Battery protection IC

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